Negative Magnetoresistance and Inelastic Scattering Time in Si-MOS Inversion Layers
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概要
- 論文の詳細を見る
Magnetic field dependence of magnetoconductivity in Si-MUS(001) z-channelinversion layers is analysed by fitting recently developed Kawabata's theory toexperimental data. The theory is applicable to higher magnetic field region thanHikami, Larkin and Nagaoka's theory and takes the intervalley scattering effectinto account. Temperature dependence of the inelastic scattering time r. is dis-cussed in terms of Fukuyama and Abrahams' theory for electron-electron scatteringwith large momentum transfer and Altshuler et al.'s theory for that with smallmomentum transfer.
- 社団法人日本物理学会の論文
- 1984-09-15
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Kawaguchi Yoichi
Gakushuin Women's Junior College
関連論文
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- Localization and Quantum Hall Effect in Two-Dimensional Systems Under Strong Magnetic Fields(Transport and Fermiology)
- Phase Boundaries between Quantum Hall Metal and Hall Insulator in Si-MOSFET's and Many-Body Enhancement of Valley- and Zeeman-Splitting
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- Breakdown of the Quantum Hall Effect in GaAs/AlGaAs Heterostructures Due to Current
- Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
- Temperature Dependence of Collapse of Quantized Hall Resistance(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Effects of Light and Temperature on the Growth of Silicon Stain Films
- Deep Trap Levels in Silicon P-N Junctions
- Activation Energies of the Fractional Quantum Hall Effect in GaAs/AlGaAs Heterostructures
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- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Superconductivity in InAs Surfaces
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire
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- Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
- Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics) -- (Surface)
- Hall Effect in Sillicon Inversion Layers under Strong Magnetic Fields
- Hall Current Measurement under Strong Magnetic Fields for Silicon MOS Inversion Layers
- Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
- Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
- Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
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- Anomalous Magnetoresistance of Clean Cleaved Surfaces in InAs
- Spin-Orbit Interaction in Two Dimensiomal Systems in InAs n-Inversion Layers
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- Angular Distribution Measurements of Photoemitted Electrons for InAs by Means of Magnetic Field
- Experiments on Localization in Semiconductor Two-Dimensional Systems
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- A Study of Electron Mobility and Electron-Phonon Interaction in Si MOSFETs by Negative Magnetoresistance Experiments
- The Two-Dimensional Lattice Scattering Mobility in a Semiconductor Inversion Layer
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