Collapse of the Quantised Hall Resistance and Role of the Diagonal Resistivity in the Quantum Hall Effect(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
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Collapse of the quantized Hall resistance (QHR) R_H(4) in high precision and change in the diagonal resistivity ρ_<xx> with the increase in source-drain current I_<SD> are measured in GaAs/AlGaAs heterostructure Hall bars used for the confirmation of the sample-width independent accuracy of the R_H(i)(i : an integer) by Jeanneret et al. [IEEE Trans. Instrum. Meas. 44 (1995) 254]. Compared with our butterfly-type Hall bars, the Jeanneret-type Hall bars show the same behavior in the collapse of the QHR while the change in ρ_<xx> against I_<SD> shows significantly different behavior. Jeanneret-type Hall bars appear to show more homogeneous electronic properties than butterfly-type Hall bars. Effect of structures of the central narrow channel and voltage probes for ρ_<xx> and R_H measurement in both Hall bars and correlation between the deviation of the Hall resistance ΔR_H=R_H-R_H(4) and ρ_<xx> with the increase in I_<SD> are discussed.
- 社団法人日本物理学会の論文
- 2005-10-15
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Kawashima Hironori
Department Of Physics Gakushuin University:(present Address)institute Of Physical And Chemical Resea
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Tanaka Hiroyasu
Department Of Physics Gakushuin University
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Tanaka Hiroyasu
Department Of Pharmacology Institute Of Pharmaceutical Sciences Hiroshima University School Of Medic
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KAWASHIMA Hironori
Department of Physics, Gakushuin University:(Present address)RIKEN
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