Quantum Galvanomagnetic Effect in n-Channel Silicon Inversion Layers under Strong Magnetic Fields (Selected Topics in Semiconductor Physics<特集>) -- (Surface)
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概要
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The transverse conductivity components σ_<xx> and σ_<xy> in n-channel inversion layers on silicon (100) surfaces under strong magnetic fields up to 98 kOe applied perpendicularly to the surface are measured as functions of the gate voltage at 1.6 K. A line shape analysis based on the quantum transport theory of the two-dimensional electron system in selfconsistent Born approximation is performed for σ_<xx> and σ_<xy>. The line shape of σ_<xx> is well reproduced by the theory. The overall behaviour of σ_<xy> is satisfactorily explained by the theory although with some quantitative disagreements.
- 理論物理学刊行会の論文
- 1975-11-29
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Wakabayashi J
Department Of Physics Chuo University
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Wakabayashi Jun-ichi
Department Of Physics Gakushuin University
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IGARASHI Tatsuji
Department of Physics, Gakushuin University
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Igarashi Tatsuji
Department Of Physics Gakushuin University
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WAKABAYASHI Jun-ichi
Department of Physics, Gakushuin University
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