Analysis of Telnperature Dependent Hall Conductivity in Silicon Inversion Layers in Strong Magnetic Fields by a Mobility Edge Model
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概要
- 論文の詳細を見る
T (temperature)- and N_s (electron concentration)-dependence of the Hall conductivity in (0↓+) Landau level of n-chaunel (001) Si MOS inversion layers at 1.5 K〜12 K in 15 T is analysed based on a mobility edge model. Observations at T≤2.5 K are reproduced by taking into account N_s-dependence of the Landau-level width. A possible way to account for observations at T>2.5 K is to take into account T-dependence of the mobility edge.
- 社団法人日本物理学会の論文
- 1981-12-15
著者
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Moriyama Jiro
Department Of Physics Gakushuin University
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Wakabayashi Jun'ichi
Department Of Physics Gakushuin University:(present Address)cavendish Laboratory University Of Cambr
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