Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
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概要
- 論文の詳細を見る
Breakdown of the quantum Hall effect due to current has been measured in specially designed samples with width ranging from 3 to 60 μ m made from five different GaAs/AlGaAs heterostructure wafers at 0.5 K in magnetic fields B up to 6 T. Critical current at the onset of the breakdown is proportional to the sample width irrespective of electron mobility between 13.5 and 27 m^2/Vs. The critical Hall electric field at the breakdown for quantized Hall plateaus with a given even plateau quantum number is proportional to B^<3/2> and does not depend on the electron mobility of the sample.
- 社団法人日本物理学会の論文
- 1995-06-15
著者
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KAWAJI Shinji
Department of Physics,Gakushuin University
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Kawaji Shinji
Department Of Physics And Chemistry Gakushuin University
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Okamoto Tohru
Department of Physics, Gakushuin University
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Okamoto Tohru
Department Of Physics Gakushuin University
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Sakai J
Mitsubishi Electric Corp. Hyogo Jpn
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Okuno Takeharu
Department of Physics, Gakushuin University
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Ohrui Takahiro
Department of Physics, Gakushuin University
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Kurata Yuka
The 2nd Thin Film Engineering Department, ANELVA Corporation
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Sakai Junro
The 2nd Thin Film Engineering Department, ANELVA Corporation
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Okuno T
Univ. Tokyo Tokyo
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Kurata Yuka
The 2nd Thin Film Engineering Department Anelva Corporation
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Ohrui Takahiro
Department Of Physics Gakushuin University
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Okuno Takeharu
Department Of Physics Gakushuin University
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