Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Satoh Minoru

  Nagaoka University Of Technology

• Satoh M

  Tohoku Univ. Sendai Jpn

• Inoue Yasuo

  Lsi Research & Development Laboratory Mitsubishi Electric Corporation

• Tamura Takao

  Ulsi Device Development Laboratories Nec Corp.

• Satoh Masaharu

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Satoh M

  Department Of Physics Faculty Of Science Okayama University

• IZUMI Yoshitaka

  NHK Science and Technical Research Laboratories

• TAMURA Takahiro

  Semiconductor Division, YAMAHA Corporation

• SAKAI Junro

  Semiconductor Equipment Division, Anelva Corporation

• INOUE Yoichi

  Semiconductor Equipment Division, Anelva Corporation

• SATOH Makoto

  Semiconductor Equipment Devision, Anelva Corporation

• YOSHITAKA Hikaru

  Semiconductor Equipment Division, Anelva Corporation

• Iwai Yuki

  Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.

• Sakai J

  Mitsubishi Electric Corp. Hyogo Jpn

• Yoshitaka Hikaru

  Semiconductor Equipment Division Anelva Corporation

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