Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-02-01

著者

• Satoh Minoru

  Nagaoka University Of Technology

• Sameshima T

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Sameshima Toshiyuki

  Tokyo University Of Agriculture And Technology

• Sameshima Toshiyuki

  Sony Research Center

• Satoh M

  Tohoku Univ. Sendai Jpn

• Sakamoto Keiji

  Tokyo University Of Agriculture And Technology

• Satoh Masaharu

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Satoh M

  Department Of Physics Faculty Of Science Okayama University

• SAITOH Keiko

  Tokyo University of Agriculture and Technology

• Sakamoto K

  Tohoku Univ. Miyagi Jpn

• Saitoh Keiko

  Tokyo University Of Agriculture & Technology

• Sakamoto Kunihiro

  Electrotechnical Laboratory (etl)

• Sameshima Toshiyuki

  Tokyo A&t University

• Ozaki K

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• SATOH Mitsuru

  Tokyo University of Agriculture and Technology

• OZAKI Kentaro

  Tokyo University of Agriculture and Technology

• HISAMATSU Ai

  Tokyo University of Agriculture & Technology

• Satoh Mitsuru

  Tokyo University Of Agriculture & Technology

• Sakamoto Kenji

  Institute Of Fluid Science Tohoku University

• Hisamatsu Ai

  Tokyo University Of Agriculture & Technology

関連論文

• Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
• Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
• Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
• Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
• High-Dose Implantation of MeV Carbon Ion into Silicon
• Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
• Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
• Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
• Focused High-Energy Heavy Ion Beams
• Surface Structure of Ion-Implanted Silica Glass
• Tomography of Microstructures by Scanning Micro-RBS Probe
• Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
• Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing Method
• Homogeneous Growth of Zinc Oxide Whiskers
• Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
• Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
• Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
• High pressure water vapor annealing for improving HfSiO dielectrics properties
• In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
• Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
• Crystalline Properties of Laser Crystallized Silicon Films
• The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
• New Method to Increase Solid Precursor Vaporization for Metalorganic Chemical Vapor Deposition
• New Liquid Precursors of Yttrium and Neodymium for Metalorganic Chemical Vapor Deposition
• Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
• Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
• Behaviors of surfactant atoms on Si(001) surface
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• Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
• Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
• Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
• Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
• Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
• Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
• Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
• Electron Beam Block Exposure : Electron Beam Lithography
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
• Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
• RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
• Follow-up Study on Metastatic Cerebellar Tumor Surgery : Characteristic Problems of Surgical Treatment
• Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
• Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
• High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
• Influence of Gas Desorption from SiOF Film Prepared by High-Density-Plasma Chemical Vapor Deposition upon TiN/Ti Film
• Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
• Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
• Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
• Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
• Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
• Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
• Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
• Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
• Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
• Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
• Electrical and Optical Properties of Poly (p-phenylene) Film and Their Doping Effect
• Characteristics of Rechargeable Battery Using Conducting Poly(p-phenylene) Film
• Highly Conducting Polypyrrole Prepared by Electrochemical Oxidation Method in Aqueous Solution
• Asymmetry of the Quadrupole Satellite Lines of ^Na in NaNO_2
• Orientation Dependence of the Quadrupole Relaxation in NaNO_2
• Gradient-Elastic Tensor in Ferroelectric Sodium Nitrite, NaNO_2
• Nuclear Magnetic Resonance Acoustic Saturation of ^Na in Sodium Nitrite
• Laser Beam Diffraction Patterns by Standing Uitrasound in Crystals
• Pulsed Nuclear Double Resonance in Alkali-Halide Solid Solutions
• NMR Acoustic Saturation Study on the Strain Distribution in the Crystal Caused by Ultrasonics
• Pulsed Nuclear Double Resonance in NaCl+NaBr Mixed Crystals
• Double Nuclear Magnetic Resonance in NaClO_3 by Acoustic Excitation
• High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
• Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
• Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
• Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
• Crystalline Silicon Solar Cells with Two Different Metals
• High Signal-to-Noise Ratio and High Resolution Detection Techniques for Photopyroelectric Thermal Wave Imaging Reconstruction
• High-Frequency and High-Gain Amplification of Photothermal Beam Deflection Angle Using Cylindrical Reflection Mirror
• Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
• Electrical Properties of Pulsed Laser Crystallized Silicon Films
• Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
• Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
• Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
• Study on Initial Growth of Particles in Low-Pressure and Low-Power GeH_4 RF Discharges Using the High-Sensitivity Photon-Counting Laser-Light-Scattering Method
• Transition of Particle Growth Region in SiH_4 RF Discharges
• Similarities in Spatial Distributions of Absolute GeH_2 Density, Radical Production Rate and Particle Amount in GeH_4 RF Discharges
• Orange Luminescence in CdS
• Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating
• Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
• Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
• Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
• Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Passivation of SiO_2/Si Interfaces Using High-Pressure-H_2O-Vapor Heating
• Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
• Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
• Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement

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