Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Sameshima T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Sameshima Toshiyuki
Tokyo University Of Agriculture And Technology
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Sameshima Toshiyuki
Sony Research Center
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KANEKO Yoshiyasu
Tokyo University of Agriculture and Technology
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ANDOH Nobuyuki
Tokyo University of Agriculture and Technology
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Sameshima Toshiyuki
Tokyo A&t University
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Andoh Nobuyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Andoh N
Tokyo University Of Agriculture And Technology
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- In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
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- Crystalline Properties of Laser Crystallized Silicon Films
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- Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
- Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
- Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
- Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
- High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
- Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
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