Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing

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概要

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• We report the activation of silicon implanted with phosphorus and boron atoms by infrared semiconductor laser annealing using carbon films as an optical absorption layer. 2-μm surface region was heated above 1000 °C longer than 22 μs by scanning the laser beam for a dwell time of 40 μs. We carried out implantations of $1 \times 10^{15}$ cm-2 phosphorus atoms at 100, 300, and 500 keV, and boron clusters with a boron concentration of $1 \times 10^{15}$ cm-2 at 6 keV. Laser irradiation at 375 kW/cm2 was conducted to activate impurities. Secondary ion mass spectrometry measurement revealed that laser annealing caused no substantial change in the phosphorus and boron atom profiles. Laser-induced recrystallization of surface amorphized regions caused by the ion implantation was analyzed using the optical reflectivity spectra ranging from 250 to 1000 nm. The free carrier absorption analyses indicated that the phosphorus and boron atoms were effectively activated by laser annealing.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-07-25

著者

• Sano Naoki

  Hightec Systems Corporation

• Sameshima Toshiyuki

  Tokyo A&t University

• Sano Naoki

  Hightec Systems Corporation, Yokohama 222-0033, Japan

• Ukawa Kan

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Kanda Yasushi

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Naito Masao

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

• Hamamoto Nariaki

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

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