Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Sano Naoki

  Hightec Systems Corporation

• Sameshima Toshiyuki

  Hightec Systems Corporation

• Andoh Yasunori

  Nissin Ion Equipment. Co., Ltd., Kyoto 601-8205, Japan

• MATSUDA Yasuhiro

  Tokyo University of Agriculture and Technology

• Andoh Yasunori

  Nissin Ion Equipment Co. Ltd

• Andoh Yasunori

  NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan

関連論文

• Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
• Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
• Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
• Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing

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