Sano Naoki | Hightec Systems Corporation
スポンサーリンク
概要
関連著者
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Sano Naoki
Hightec Systems Corporation
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Sameshima Toshiyuki
Tokyo A&t University
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Andoh Yasunori
NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan
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Andoh Nobuyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Matsuda Yasuhiro
Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan
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Maki Masato
Tokyo University Of Agriculture And Technology
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Sameshima Toshiyuki
Tokyo University Of Agriculture And Technology
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ANDOH Nobuyuki
Tokyo University of Agriculture and Technology
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Sameshima Toshiyuki
Hightec Systems Corporation
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Andoh Yasunori
Nissin Ion Equipment. Co., Ltd., Kyoto 601-8205, Japan
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MATSUDA Yasuhiro
Tokyo University of Agriculture and Technology
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Andoh Yasunori
Nissin Ion Equipment Co. Ltd
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Andoh Yasunori
Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan
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Andoh Nobuyuki
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Takiuchi Megumu
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Sameshima Toshiyuki
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Sano Naoki
Hightec Systems Corporation, Yokohama 222-0033, Japan
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Ukawa Kan
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kanda Yasushi
Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Naito Masao
Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan
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Hamamoto Nariaki
Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan
著作論文
- Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
- Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
- Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
- Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
- Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
- Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing