Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing

スポンサーリンク

概要

• 論文の詳細を見る

• We report the recrystallization behavior of silicon implanted with phosphorus atoms at 10 and 70 keV with a dose of $2\times10^{15}$ cm-2. The samples were coated with a 200-nm-thick diamond-like-carbon optical absorption layer and then annealed by irradiation with a 940 nm continuous-wave laser at 70 kW/cm2. An analysis of optical reflectivity spectra showed an in-depth distribution of the crystalline volume ratio. The amorphized surface regions produced by the phosphorus implantation were recrystallized from the bottom region by laser annealing. They were almost completely recrystallized by the laser annealing for 2.6 ms. The in-depth profiles of phosphorus concentration hardly changed for the laser annealing for 2.6 ms. The implanted regions were effectively activated by the laser annealing and the sheet resistance markedly decreased to 102 and 46 $\Omega$/sq for implantion at 10 and 70 keV, respectively.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-03-25

著者

• Sano Naoki

  Hightec Systems Corporation

• Sameshima Toshiyuki

  Tokyo A&t University

• Andoh Yasunori

  NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan

• Matsuda Yasuhiro

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

関連論文

• Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
• High pressure water vapor annealing for improving HfSiO dielectrics properties
• Crystalline Properties of Laser Crystallized Silicon Films
• The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
• Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
• Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
• Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
• Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
• Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
• Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
• Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
• Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
• High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
• Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
• Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
• Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
• Crystalline Silicon Solar Cells with Two Different Metals
• Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
• Electrical Properties of Pulsed Laser Crystallized Silicon Films
• Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
• Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
• Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
• Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating
• Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
• Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
• Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
• Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Passivation of SiO_2/Si Interfaces Using High-Pressure-H_2O-Vapor Heating
• Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
• Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
• Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
• Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
• Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
• Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
• Characterization of Polycrystalline Silicon Thin-Film Transistors
• Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Analysis of Microwave Absorption Caused by Free Carriers in Silicon
• Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
• Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
• Pulsed Laser Annealing of Thin Silicon Films
• Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
• Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress
• Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
• Multi junction solar cells using band-gap induced cascaded light absorption

もっと見る 閉じる

スポンサーリンク