Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating

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概要

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• Large crystalline grain growth was demonstrated for 60-nm-thick silicon films using the electrical-current-induced joule heating method. Tapered electrodes were used in order to ensure distribution of the joule heating intensity in the lateral direction along the surface in silicon strips. Melting of silicon for 17 μs caused by the joule heating resulted in the formation of 4-8-μm-long crystalline grains. The change in the film thickness was at most 6 nm in the crystallized region. There was a tensile stress of 5.6 x 10^8 Pa in the film. The heat flow simulation demonstrated that the solidification occurred in the lateral direction according to the temperature gradient and that the solid/liquid interface moved in the lateral direction at the velocity of about 1-2 m/s.

• 社団法人応用物理学会の論文
• 2002-09-15

著者

• ANDOH Nobuyuki

  Tokyo University of Agriculture and Technology

• Sameshima Toshiyuki

  Tokyo A&t University

• Andoh Nobuyuki

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

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