Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
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概要
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The activation behavior of boron and phosphorus implanted into laser-crystallized silicon films were investigated. The ratio of recrystallization of an ion-doping-induced amorphous region by heat treatment at 250°C was 0.35 for a boron concentration lower than $6.4\times 10^{19}$ cm-3 and 0.5 for a phosphorus concentration lower than $2.5\times 10^{19}$ cm-3. This ratio decreased as dopant concentration increased. High electrical conductivities of $1.1\times 10^{2}$ S/cm and 7.3 S/cm were achieved by oxygen plasma treatment at 250°C for 1 h in the cases of $3.2\times 10^{20}$-cm-3 boron and $5.0\times 10^{19}$-cm-3-phosphorus doping, respectively. Numerical analysis of the electrical conductivity revealed that the electrical conductivity was governed by recrystallization ratio and the density of the intrinsic defects of polycrystalline films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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Sameshima Toshiyuki
Tokyo A&t University
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Andoh Nobuyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Sameshima Toshiyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Andoh Yasunori
Nissin Ion Equipment. Co., Ltd., Kyoto 601-8205, Japan
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Andoh Yasunori
Nissin Ion Equipment Co. Ltd
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Andoh Yasunori
Nissin Ion Equipment. Co. Ltd.
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Andoh Yasunori
NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan
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