Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing

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概要

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• We activated silicon implanted with phosphorus atoms by infrared semiconductor laser annealing with a diamond-like carbon (DLC) optical absorption layer. The silicon samples implanted with phosphorus atoms at 10 and 70 keV with concentrations of $5\times 10^{14}$, $1\times 10^{15}$, and $2\times 10^{15}$ cm-2 were coated with 200-nm-thick DLC films. The samples were annealed by irradiation with a 940 nm continuous wave laser at 70 kW/cm2 with a beam diameter of 180 μm. The laser beam was scanned using a moving stage at 3–20 cm/s, which gave an effective dwell time of 0.9–6.0 ms. The amorphized surface regions were recrystallized by laser annealing longer than 1.2 ms. The in-depth profile of phosphorus concentration hardly changed within 5 nm for laser annealing for 2.6 ms. The sheet resistance markedly decreased to 106 and 46 $\Omega$/sq for the samples implanted with phosphorus atoms at 10 and 70 keV by laser annealing at a dwell time of 2.6 ms, respectively. Phosphorus atoms were effectively activated with a carrier density near the phosphorus concentration for implantation at 70 keV. A low carrier generation rate was observed for implantation at $2\times 10^{15}$ cm-2 and 10 keV. An intermediate SiO2 layer effectively blocked carbon incorporation to a level below $10^{17}$ cm-3.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-10-15

著者

• Sano Naoki

  Hightec Systems Corporation

• Sameshima Toshiyuki

  Tokyo A&t University

• Maki Masato

  Tokyo University Of Agriculture And Technology

• Andoh Nobuyuki

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Andoh Yasunori

  NISSIN Electric Co., Ltd., Kyoto 615-8686, Japan

• Matsuda Yasuhiro

  Nissin Ion Equipment Co., Ltd., Koka, Shiga 528-0068, Japan

• Takiuchi Megumu

  Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

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