Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
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概要
- 論文の詳細を見る
Changes in the electrical properties of pulsed laser crystallized films with oxygen plasma treatment were investigated.50-nm-thick silicon films doped with 7.4×10^17cm^-3 phosphorus atoms crystallized by a 308-nm-XeCl excimer laser at an energy density of 400mJ/cm^2 were treated by 30-W-RF plasma of oxygen gas at 130Pa at 250℃.The electrical conductivity markedly increased from 6.9×10^-5S/cm(as crystallized)to 10S/cm by heat treatment for 40 min.Theoretical analysis of the electrical conductivity revealed that the potential barrier height at grain boundaries decreased from 0.32eV(as crystallized)to almost zero, and that carrier mobility increased from 15cm^2/Vs(as crystallized)to 170cm^2/Vs.
- 社団法人応用物理学会の論文
- 2000-04-15
著者
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HIGASHI Seiichiro
Seiko Epson Corporation, Technology Platform Research Center
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Tsunoda Yoshiyuki
Tokyo University Of Agriculture And Technology
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Sameshima Toshiyuki
Tokyo A&t University
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Higashi Seiichiro
Seiko Epson Corporation
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