High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2003-07-15

著者

• 井上 聡

  セイコーエプソン株式会社フロンティアデバイス研究所

• 下田 達也

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology

• INOUE Satoshi

  Seiko Epson Corporation

• SHIMODA Tatsuya

  Seiko Epson Corporation

• ABE Daisuke

  Seiko Epson Corporation, Technology Platform Research Center

• HIGASHI Seiichiro

  Seiko Epson Corporation, Technology Platform Research Center

• MORIMURA Taro

  Ulvac, Inc., Chiba Institute for Super Materials

• SARRO Kazuya

  Ulvac, Inc., Chiba Institute for Super Materials

• Morimura Taro

  Ulvac Inc. Chiba Institute For Super Materials

• Abe Daisuke

  Frontier Device Research Center Seiko Epson Corporation

• Shimoda Tatsuya

  Seiko Epson Corp. Nagano Jpn

• Sarro Kazuya

  Ulvac Inc. Chiba Institute For Super Materials

• Inoue S

  Frontier Device Research Center Seiko Epson Corporation

• Inoue S

  Seiko Epson Corporation

• Izumi S

  Division Of Oral Cytology And Cell Biology Nagasaki University Graduate School Of Biomedical Science

• Saito Kazuya

  Ulvac, Inc., Chiba Institute for Super Materials, 523 Yokota, Sanbu-machi, Sanbu-gun, Chiba 289-1226

• Higashi S

  Seiko Epson Corporation Technology Platform Research Center

• Higashi Seiichiro

  Seiko Epson Corporation

• 下田 達也

  Seiko Epson Corporation

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