Shimoda Tatsuya | Seiko Epson Corp. Nagano Jpn

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著作論文

High-Performance Polyclystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
Classification of Driving Methods for TFT-OLEDs and Novel Proposal Using Time Ratio Grayscale and Current Uniformization(Electronic Displays)
High Performance P-Channel Single-Crystalline Si TFTs Fabricated Inside a Location-Controlled Grain by μ-Czochralski Process(Electronic Displays)
Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
Extraction of Trap State at the Oxide-Silicon Interface and Grain Biundary in Polycrystallune Silicon Thin-Film Transistors
Device Simulation of Grain Boundaries in Lightly Doped Polysilicon Films and Analysis of Dependence on Defect Density
Novel Si Codoped Pb(Zr, Ti, Nb)O_3 Thin Film for High-Density Ferroelectric Random Access Memory
Preparation of Novel PZTN Thin Film Co-doped Si
Relationship between Lattice Deformation and Polarization in BaTiO_3
Electronic States of Perovskite-Type Oxides and Ferroelectricity
Fabrication of KNbO_3 Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition
Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density : Semiconductors
Current Paths over Grain Boundaries in Polycrystalline Silicon Films : Semiconductors
High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing
Plasma Oxidation of Silicon and Its Application to Poly-Si TFT Fabrication Process (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
Plasma Oxidation of Silicon and its Application to Poly-Si TFT Fabrication Process
Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors
Capping Layer on Thin Si Film for $\mu$-Czochralski Process with Excimer Laser Crystallization
Structural Properties of Nickel Metal-Induced Laterally Crystallized Silicon Films and Their Improvement Using Excimer Laser Annealing

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