Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-06-01

著者

• 井上 聡

  セイコーエプソン株式会社フロンティアデバイス研究所

• Abe Daisuke

  Frontier Device Research Center Seiko Epson Corporation

• HIGASHI Seiichiro

  Base Technology Research Center, Seiko Epson Corp.

• ABE Daisuke

  Base Technology Research Center, Seiko Epson Corp.

• INOUE Satoshi

  Base Technology Research Center, Seiko Epson Corp.

• SHIMODA Tatsuya

  Base Technology Research Center, Seiko Epson Corp.

• Shimoda Tatsuya

  Seiko Epson Corp. Nagano Jpn

• Shimoda Tatsuya

  Base Technology Research Center Seiko Epson Corporation

• Inoue S

  Seiko Epson Corporation

• Higashi S

  Seiko Epson Corporation Technology Platform Research Center

• 下田 達也

  Seiko Epson Corporation

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