Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-08-01

著者

• HIGASHI Seiichiro

  Seiko Epson Corporation, Technology Platform Research Center

• Sameshima T

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Sameshima Toshiyuki

  Tokyo University Of Agriculture And Technology

• Sameshima Toshiyuki

  Sony Research Center

• Sakamoto Keiji

  Tokyo University Of Agriculture And Technology

• Sakamoto K

  Tohoku Univ. Miyagi Jpn

• Sakamoto Kunihiro

  Electrotechnical Laboratory (etl)

• Sameshima Toshiyuki

  Tokyo A&t University

• Ozaki K

  Tokyo Univ. Agriculture And Technol. Tokyo Jpn

• Kano Y

  Tokyo University Of Agriculture And Technology

• OZAKI Kentaro

  Tokyo University of Agriculture and Technology

• Kano Yoshiaki

  Tokyo University of Agriculture and Technology

• Sakamoto Kenji

  Institute Of Fluid Science Tohoku University

• Higashi S

  Seiko Epson Corporation Technology Platform Research Center

• Higashi Seiichiro

  Seiko Epson Corporation

関連論文

• High-Quality Gate-SiO_x and SiO_x/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition
• Low-Temperature Formation of Device-Quality SiO_2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
• Improvement of Gate-Insulator/Silicon Interface Characteristics in Amorphous Silicon Thin Film Transistors
• Observation of Laser-Induced Melting of Silicon Film Followed by Amorphization
• Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
• Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
• High-Quality SiO_2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor(Semiconductors)
• Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
• Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
• High pressure water vapor annealing for improving HfSiO dielectrics properties
• Overdense Plasma Production Using Electron Cyclotron Waves
• In Situ Observation of Pulsed Laser Doping : Semiconductors and Semiconductor Devices
• Fabrication of Heavily-Doped Polycrystalline Silicon Film Using a Laser-Doping Technique
• Crystalline Properties of Laser Crystallized Silicon Films
• The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
• Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
• Behaviors of surfactant atoms on Si(001) surface
• Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant
• Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? : Bi as a Surfactant with Small Self-Incorporation
• New Microwave Launcher for Producing ECR Plasmas without Window Contamination I. : Excitation of Electron Cyclotron Wave
• X-Ray Computerized Tomography Using Monochromated Synchrotron Radiation : Techniques, Instrumentations and Measurement
• Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
• Repetitive One-Tenth Micron Pattern Fabrication Using An EB Block Exposure System
• Electron Beam Block Exposure System for 256 M Dynamic Random Access Memory Lithography
• Electron Beam Block Exposure : Electron Beam Lithography
• Electron Beam Block Exposure
• Stochastic Electron Acceleration by an Electron Cyclotron Wave Propagating in an Inhomogeneous Magnetic Field
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
• Improvement of Spatial Resolution of Monochromatic X-ray CT Using Synchrotron Radiation
• Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
• Identification of a High-Copy-Number Plasmid Suppressor of a Lethal Phenotype Caused by Mutant DnaA Protein Which Has Decreased Instrinsic ATPase Activity
• Alteration in Levels of Unsaturated Fatty Acids in Mutants of Escherichia coli Defective in DNA Replication
• Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
• Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
• Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
• Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
• Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
• Observation of Direct Band Gap Properties in Ge_nSi_m Strained-Layer Superlattices
• High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
• Driving Performance of a Two-Dimensional Homopolar Linear DC Motor
• Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
• Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
• Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
• Crystalline Silicon Solar Cells with Two Different Metals
• High Signal-to-Noise Ratio and High Resolution Detection Techniques for Photopyroelectric Thermal Wave Imaging Reconstruction
• High-Frequency and High-Gain Amplification of Photothermal Beam Deflection Angle Using Cylindrical Reflection Mirror
• Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
• Electrical Properties of Pulsed Laser Crystallized Silicon Films
• Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
• Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
• Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
• Study on Initial Growth of Particles in Low-Pressure and Low-Power GeH_4 RF Discharges Using the High-Sensitivity Photon-Counting Laser-Light-Scattering Method
• Transition of Particle Growth Region in SiH_4 RF Discharges
• Similarities in Spatial Distributions of Absolute GeH_2 Density, Radical Production Rate and Particle Amount in GeH_4 RF Discharges
• Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating
• Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
• Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
• Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
• Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
• Passivation of SiO_2/Si Interfaces Using High-Pressure-H_2O-Vapor Heating
• Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
• Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
• Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
• Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
• Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
• Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
• Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
• Characterization of Polycrystalline Silicon Thin-Film Transistors
• Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
• Analysis of Microwave Absorption Caused by Free Carriers in Silicon
• Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
• Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
• Pulsed Laser Annealing of Thin Silicon Films
• Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
• Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress
• Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
• Multi junction solar cells using band-gap induced cascaded light absorption

もっと見る 閉じる

スポンサーリンク