Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
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概要
- 論文の詳細を見る
Transient thermometry was applied to measure temperature distribution caused by self-heating in n-channel poly-Si TFTs on glass. Pt wires 30 nm thick were formed above the Al gate electrode via an intermediate SiO_2 layer with positions above the drain edge, middle and the source as temperature sensors. Temperature above the drain edge increased 9 K from room temperature at a power consumption of 20 μW/μm per unit gate width, while it increased only 6 K above the source edge when the TFT was operated in a saturation mode. This results from heat generation being localized near the drain edge. The temperature change with time is also discussed.
- 社団法人応用物理学会の論文
- 1996-03-01
著者
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Kohno Atsushi
Faculty Of Science Fukuoka University
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Sameshima Toshiyuki
Tokyo A&t University
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Kohno Atsushi
Faculty Of Science Kyushu University
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SUNAGA Yuji
Tokyo A&T University
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Sunaga Yuji
Tokyo A&t University
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