Sameshima Toshiyuki | Tokyo A&t University

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概要

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著作論文

Improvement of SiO_2 Properties and Silicon Surface Passivation by Heat Treatment with High-Pressure H_2O Vapor
High pressure water vapor annealing for improving HfSiO dielectrics properties
Crystalline Properties of Laser Crystallized Silicon Films
The Gas Combustion of H_2 with N_2O Used for Rapid Thermal Annealing
Application of Rapid Joule Heating Method to Fabrication of Polycrystalline Silicon Thin Film Transistors
Rapid Joule Heating of Metal Films Used to Fabricate Polycrystalline Silicon Thin Film Transistors : Semiconductors
Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
Heat Treatment with High-Pressure H_2O Vapor of Pulsed Laser Crystallized Silicon Films
Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
High-Pressure H_2O Vapor Heat Treatment Used to Fabricate Poly-Si Thin Film Transistors : Semiconductors
Characterization of Plasma-Irradiated SiO2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method
Infrared Semiconductor Laser Crystallization of Silicon Thin Films Using Diamond-Like Carbon as Photoabsorption Layer
Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
Crystalline Silicon Solar Cells with Two Different Metals
Defect Reduction in Polycrystalline Silicon Thin Films at 150 °C
Electrical Properties of Pulsed Laser Crystallized Silicon Films
Activation Behavior of Boron and Phosphorus Atoms Implanted in Polycrystalline Silicon Films by Heat Treatment at 250°C
Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
Improvement of Si0_2 Properties by Heating Treatment in High Pressure H_20 Vapor
Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating
Measurements of Temperature Distribution in Polycrystalline Thin Film Transistors Caused by Self-Heating
Current-Induced Joule Heating Used to Crystallize Silicon Thin Films
Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
Passivation of SiO_2/Si Interfaces Using High-Pressure-H_2O-Vapor Heating
Activation of Implanted Boron Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers
Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices : Phonon/Band Structures Modulation Due to Quantum Confinement Effects (Special Issue : Solid State Devices and Materials (1))
Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment
Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement
Improvement in SiO2 Film Properties Formed by Sputtering Method at 150 °C
Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
Heating Layer of Diamond-Like Carbon Films Used for Crystallization of Silicon Films
Characterization of Polycrystalline Silicon Thin-Film Transistors
Recrystallization Behavior of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing
Analysis of Microwave Absorption Caused by Free Carriers in Silicon
Activation of Silicon Implanted with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Rapid Annealing
Improvement of Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Water Vapor Annealing
Pulsed Laser Annealing of Thin Silicon Films
Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects at Cut Edges and Bear Surfaces of Crystalline Silicon
Forward Transfer of Thin-Film Devices to Flexible Substrates by Applying Thermal Stress
Germanium Oxide Layers Used for Forward Transfer of Electrical Circuits to Foreign Plastic Substrates
Multi junction solar cells using band-gap induced cascaded light absorption

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