FUYUKI Takashi | Graduate School of Materials Science, Nara Institute of Science and Technology

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概要

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著作論文

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal-Oxide-Semiconductor Structures
Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System
Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node
Analysis of Photoelectrochemical Processes in α-SiC Substrates with Atomically Flat Surfaces
Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
Fabrication of Anodic Oxidation Films on 4H-SiC at Room Temperature Using HNO_3-Based Electrolytes
Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
Degradation in Low-Temperature Poly-Si Thin Film Transistors Depending on Grain Boundaries
Gate Length Dependence of Hot Carrier Reliability in Low-Temperature Polycrystatline-Silicon P-Channel Thin Film Transistors
Low Temperature Nitridation of Si Oxide Utilizing Activated Nitrogen(Semiconductors)
Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations
Hot Carrier Effect in Low-Temperature poly-Si p-ch Thin-Film Transistors under Dynamic Stress : Semiconductors
Floating Gate MOS Capacitor with High-Density Nanodots Array Produced by Protein Supramolecule
High-Density Floating Nanodots Memory Produced by Cage-Shaped Protein
Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
Carrier Injection/Transport Characteristics of Photochromic Diarylethene Film : Surfaces, Interfaces, and Films
Solution Electrochemiluminescent Cell with a High Luminance Using an Ion Conductive Assistant Dopant Optics and Quantum Electronics
Solution Electrochemiluminescent Cell Using Tris(phenylpyridine) Iridium : Optics and Quantum Electronics
Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light by Simulation Program with Integrated Circuit Emphasis
Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model
NH_3 Plasma Pretreatment of 4H-SiC(0001) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices
Low-Temperature Microcrystalline Silicon Film Deposited by High-Density and Low-Potential Plasma Technique Using Hydrogen Radicals
Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics
Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
Analysis of Device Performance by Quasi Three-Dimensional Simulation for Thin Film Polycrystalline Silicon Solar Cells with Columnar Structure : Semiconductors
Passivation Effect of Plasma Chemical Vapor Deposited SiNx on Single-Crystalline Silicon Thin-Film Solar Cells
Low Temperature Nitridation of Si Oxide Utilizing Activated Oxygen and Nitrogen

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