Fujii Tadashi | the Graduate School of Materials Science, Nara Institute of Science and Technology
スポンサーリンク
概要
関連著者
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami H
Kyoto Univ. Kyoto Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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HAMADA Yuji
New Materials Research Center, SANYO Electric Co., Ltd.
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SHIBATA Kenichi
New Materials Research Center, SANYO Electric Co., Ltd.
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Hamada Yuji
New Materials Research Center Sanyo Electric Co. Ltd.
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FUYUKI Takashi
Graduate School of Materials Science, Nara Institute of Science and Technology
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Hamada Yuji
New Materials Research Center Sanyo Electric Co.
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Hamada Yuji
Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer
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Shibata K
New Materials Research Center Sanyo Electric Co. Ltd.
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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TSUJIOKA Tsuyoshi
New Materials Research Center, SANYO Electric Co., Ltd.
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Shibata Kenichi
New Material Research Center Sanyo Electric Co. Ltd.
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Fuyuki Takashi
Graduate School Of Material Science Nara Institute Of Science And Technology
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Tsujioka T
New Materials Research Center Sanyo Electric Co. Ltd.
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Tsujioka Tsuyoshi
New Materials Research Center Sanyo Electric Co. Ltd.
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Yoshinobu T
Osaka Univ. Osaka Jpn
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Yoshinobu Tatsuo
Department Of Electrical Engineering Kyoto University:(present Address) The Institute Of Scientific
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SAITOH Takashi
Department of Anesthesiology, University of the Ryukyus
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NISHIMURA Kazuki
New Materials Research Center, SANYO Electric Co., Ltd.
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Nishimura Kazuki
New Materials Research Center Sanyo Electric Co. Ltd.
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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KOMATSU Yuji
Department of Electrical Engineering, Kyoto University
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HATAYAMA Tomoaki
Department of Electronic Science and Engineering, Kyoto University
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OKA Tohru
Department of Electrical Engineering, Kyoto University
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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Oka T
Nagaoka Coll. Technol. Niigata Jpn
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Komatsu Y
Functional Devices Research Laboratories Nec Corporation
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Nishimura K
New Materials Research Center Sanyo Electric Co. Ltd.
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Hatayama T
Ion Engineering Res. Inst. Corp. Osaka Jpn
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Saitoh T
Forestry And Forest Products Res. Inst. Sapporo Jpn
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Komatsu Yuji
Department Of Chemistry And Biotechnology Graduate School Of Engineering Tottori University
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Nishimura Kohsuke
Kdd R&d Laboratories
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Saitoh Takashi
Department Of Anesthesiology University Of The Ryukyus
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Aizawa Kouichi
Department Of Integrated Biosciences Graduate School Of Frontier Sciences The University Of Tokyo:sa
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Aizawa Kouichi
Department Of Electrical Engineering Kyoto University
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Du Kai-ying
Department Of Electrical Engineering Kyoto University
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MITSUI Hideaki
Department of Electrical Engineering, Kyoto University
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TARUI Yoichiro
Department of Electrical Engineering, Kyoto University
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TANIGUCHI Akira
Graduate School of Materials Science, Nara Institute of science and Technology
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MATSUTA Shigeki
New Materials Research Center, SANYO Electric Co., Ltd.
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HOSOTANI Keiji
Department of Electrical Engineering, Kyoto University
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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Hosotani Keiji
Department Of Electrical Engineering Kyoto University
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Matsuta Shigeki
New Materials Research Center Sanyo Electric Co. Ltd.
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KAWAKITA Tetsuo
the Graduate School of Materials Science, Nara Institute of Science and Technology
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NAKAGAWA Hidehiro
the Graduate School of Materials Science, Nara Institute of Science and Technology
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URAOKA Yukiharu
the Graduate School of Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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Uraoka Yukiharu
The Graduate School Of Materials Science Nara Institute Of Science And Technology
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Kawakita Tetsuo
The Graduate School Of Materials Science Nara Institute Of Science And Technology
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Nakagawa Hidehiro
The Graduate School Of Materials Science Nara Institute Of Science And Technology
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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Taniguchi Akira
Graduate School Of Agricultural Science Tohoku University
著作論文
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- Carrier Injection/Transport Characteristics of Photochromic Diarylethene Film : Surfaces, Interfaces, and Films
- Solution Electrochemiluminescent Cell with a High Luminance Using an Ion Conductive Assistant Dopant Optics and Quantum Electronics
- Solution Electrochemiluminescent Cell Using Tris(phenylpyridine) Iridium : Optics and Quantum Electronics
- Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
- Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
- Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
- Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
- Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
- Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
- Reliability of Low Temperature Poly-Si GOLD (Gate-Overlapped LDD) Structure TFTs(Special Issue on Electronic Displays)
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure