Electron Spin Resonance and Photoluminescence in a-Si_<1-x>C_x:H Deposited at Low Substrate Temperature
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概要
- 論文の詳細を見る
Electron spin resonance and photoluminescence were measured for a-Si_<1-x>C_x:H films deposited at low substrate termperatures by a glow discharge method. In the range of the carbon content above 0.55, where the films show intense photoluminescence, the spin density in the film deposited at room temperature was less than 5×10^<-2> of that in the film deposited at 260℃. The lower spin density comes from the incorporation of a large number of H atoms in the film deposited at room temperature, which results in the intense photoluminescence.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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