Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Homoepitaxial growth on a 6H-SiC (0001)Si face was carried out successfully at 1500℃ by chemical vapor deposition. This temperature is 300℃ lower than typical well-known growth temperatures. The p-n junction diodes were fabricated with the grown layers and showed very good rectification. The breakdown electric field was estimated to be 2.4×10^6 V/cm using the characteristics of the p-n junction diodes. This value is comparable with high-temperature grown layers. The fabricated p-n junction diodes showed blue light emission in the forward-biased region.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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Matsunami H
Kyoto Univ. Kyoto Jpn
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Kuroda Naotaka
Department Of Electrical Engineering Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Nishino S
Kyoto Inst. Technol. Kyoto Jpn
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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SHIBAHARA Kentaro
Department of Electrical Engineering, Kyoto University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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