Deep Interface States in SiO_2/p-type α-SiC Structure

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-11-01

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• YANO Hiroshi

  Department of Surgery, NTT West Osaka Hospital

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Kimoto T

  Kyoto Univ. Kyoto Jpn

• INOUE NAOYA

  Department of Surgery, Wakayama Red-cross Hospital

• Yano H

  Kyoto Univ. Kyoto‐shi Jpn

• Yano Hiroshi

  Department Of Surgery Ntt West Osaka Hospital

• Kimoto Tsunenobu

  Science And Engineering Kyoto University

• Yano H

  Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Inoue N

  Kyoto Univ. Kyoto Jpn

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Inoue Naoya

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Yano Hiroshi

  Department Of Agricultural Chemistry Tohoku University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

関連論文

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• 4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replication
• Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
• Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
• Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
• Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
• Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
• Anisotropy in breakdown field of 4H-SiC
• High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
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