Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-09-25

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• SUDA Jun

  Department of Electronic Science and Engineering, Kyoto University

• HORITA Masahiro

  Department of Electronic Science and Engineering, Kyoto University

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Horita Masahiro

  Department Of Electronic Science And Engineering Kyoto University

関連論文

• A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
• Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
• Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
• Temperature Dependence of the Raman Shift of the A_ mode for NdGaO_3 Crystal
• The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
• The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
• Robust 4H-SiC pn Diodes Fabricated using (1120) Face
• High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
• Recent Progress in Epitaxial Growth of SiC for Power Devices
• Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
• Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
• High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
• Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
• Temperature Dependence of the Linewidth of the First-Order Raman Spectra for CaWO_4 Crystal
• Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
• Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
• Temperature Dependence of the Ag+Bg-Mode of Raman Shift for CaWO_4 Crystal
• Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
• Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
• Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
• Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
• Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
• Temperature Dependence of the Linewidth of the First-Order Raman Spectra for Aragonite Crystal
• The First-Order Raman Spectra and Lattice Dynamics for CdWO_4 Crystal
• Lattice Dynamics and Temperature Dependence of the Linewidth of the First-Order Raman Spectra for Sintered Hexagonal GeO_2 Crystalline
• GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique
• Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
• Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
• Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
• Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
• Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
• Lattice Dynamics and Temperature Dependence of the First-Order Raman Spectra for PbMoO_4 Crystal : Condensed Matter: Structure, etc.
• Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
• AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
• Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
• 21.7kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
• Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H–SiC(0001) Substrate
• Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
• Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
• Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
• Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
• Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
• Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
• Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)

もっと見る 閉じる

スポンサーリンク