Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching

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概要

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• The impact of HCl/H2 high-temperature gas-etching on the surface morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) faces is investigated by atomic force microscopy (AFM). Very flat surfaces are obtained on both ($11\bar{2}0$) and ($1\bar{1}00$) faces after gas-etching when the substrate surfaces are initially treated by chemical mechanical polishing to remove polishing scratches. The root-mean square roughness values of gas-etched ($11\bar{2}0$) and ($1\bar{1}00$) substrates are 0.07 and 0.11 nm, respectively. Within AFM resolution limits no atomic steps are observed on the very flat surfaces of ($11\bar{2}0$) substrates. On the other hand, clear step-and-terrace structures are observed on ($1\bar{1}00$) substrates after gas-etching and the height of the steps (2.7 Å) corresponding to the lattice spacing between 4H-SiC($1\bar{1}00$) planes ($=\sqrt{3}a/2$).

• 2008-11-25

著者

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Horita Masahiro

  Department Of Electronic Science And Engineering Kyoto University

• Horita Masahiro

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

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