GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique

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概要

• 論文の詳細を見る

• In this letter, we report the fabrication of a GaP/Si heterojunction with ohmic conduction by a wafer fusion technique. After a hydrophilic pretreatment, GaP and Si wafers were brought in contact and annealed at 500℃ in a flowing forming gas for 30 min. The electrical properties of n-GaP/n^+-Si and p^+-GaP/n^+-Si junctions fabricated by this procedure were investigated. The n-GaP/n^+-Si junction exhibited potential barriers for both directions, indicating Fermi-level pinning due to high-density interface states at the fused interface. For the p^+-GaP/n^+-Si junction, ohmic conduction(10-20Ω・cm^2)was observed. This may be due to carrier transport by a tunneling process. The wafer fusion technique of GaP/Si is applicable to optoelectronic integrated circuits(OEICs)and high-efficiency tandem-type solar cells.

• 社団法人応用物理学会の論文
• 2000-09-15

著者

• Suda Jun

  Department Of Electronic Science And Engineering Kyoto University

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• KAJITA Daisuke

  Department of Electronic Science and Engineering, Kyoto University

• Kajita D

  Department Of Electronic Science And Engineering Kyoto University

• Kajita Daisuke

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electronic Science And Engineering Kyoto University

• Soeno Akitaka

  Department Of Electronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

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