SiO_2 Film Deposition by KrF Excimer Laser Irradiation
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概要
- 論文の詳細を見る
Deposition of SiO_2 on a Si substrate by irradiating SiH_4-O_2-N_2 mixture gas with focused KrF excimer laser (wavelength: 249 nm) was carried out. The deposition rate was 300A^°/min at a substrate temperature of 250℃. The deposition strongly depends on the substrate temperature, laser power and flow ratio of O_2/SiH_4, and these parameters have individual threshold values for the film deposition. Photo-initiation phenomena in SiO_2 deposition are observed for the first time. The deposited film was evaluated by etching and infrared measurements together with electrical measurements.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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HONDA Hiroki
Department of Electrical Engineering, Kyoto University
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Honda Hiroki
Department Of Electrical Engineering Kyoto University:(present Address)mitsubishi Electric Corporati
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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