Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-09-15
著者
-
CHEN Yi
Department of Chemistry, Nanjing University
-
NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
-
MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
-
Masuda Yoshitake
Nagoya University Graduate School Of Engineering Department Of Applied Chemistry
-
Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
-
Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
-
Chen Y
Department Of Electronic Science And Engineering Kyoto University
-
MASUDA Yasuichi
Department of Electronics and Information Science, Kyoto Institute of Technology
-
Masuda Y
Department Of Electronic Intelligence And Systems Hachinohe Institute Of Technology
-
Nishino S
Kyoto Inst. Technol. Kyoto Jpn
-
Masuda Yasuichi
Department Of Electronics And Information Science Kyoto Institute Of Technology
-
Masuda Y
Human Ecology Research Center Sanyo Electric Co. Ltd.
-
Chen Yi
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
-
Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
関連論文
- A Good Performance VPO Catalyst for Partial Oxidation of n-Butane to Maleic Anhydride
- Analyses of Early Stages of Vertically Aligned Carbon Nanotube Growth by Plasma-Enhanced Chemical Vapor Deposition
- Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
- Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
- Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
- Gas Phase Syntheses of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition Using Hot filament and Plasma
- Synthesis of BaTiO_3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser
- Optical Properties of Ba_2NaNb_5O_ Film Fabricated by RF Magnetron Sputtering Method
- Preparation of Ba_2NaNb_5O_ Film by RF Magnetron Sputtering Method
- Crystal Growth, Dielectric and Polarization Reversal Properties of Bi_4Ti_3O_ Single Crystal
- Preparation and Dielectric and Electrooptic Properties of Bi_4Ti_3O_ Films by Electron Cyclotron Resonance plasma Sputtering Deposition : Thin Films
- Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory
- Preparation of La-Modified Lead Titanate Film Capacitors and Influence of SrRuO_3 Electrodes on the Electrical Properties
- Development and validation of a liquid chromatography/tandem mass spectrometry assay for the simultaneous determination of D-amphetamine and diphenhydramine in beagle dog plasma and its application to a pharmacokinetic study
- Development of a liquid chromatography/tandem mass spectrometry assay for the determination of bestatin in rat plasma and its application to a pharmacokinetic study
- Development and validation of a selective and robust LC-MS/MS method for high-throughput quantifying rizatriptan in small plasma samples : Application to a clinical pharmacokinetic study
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- Structural and Ferroelectric Properties of Ba_2NaNb_5O_ Thin Films on La-Doped SrTiO_3 Substrates
- A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
- Electronic Structures of Bi_4Ti_3O_ Thin Film and Single Crystal Determined by Resonant Soft-X-Ray Emission Spectroscopy
- High-resolution transmission electron microscopy study of Ca_3Co_4O_9
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
- Linear and Nonlinear Optical Properties of a Comb-Like Polymer
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Preparation of Bi_4Ti_3O_/Bi_2SiO_5/Si Structures Derived by Metal Organic Decomposition Technique
- Preparation and Properties of Bi_2SiO_5/Si Structures
- Ferroelectric and Pyroelectric Properties of Ba_Pb_x Ti_(Hf_,Zr_)_O_3 Thin Films : Electrical Properties of Condensed Matter
- Ferroelectric SrxBa1-xNb2O6 Synthesized by YAG Laser Deposition
- Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films
- Preparation and Ferroelectric Properties of Ti-Site Substituted BaTiO_3 Thin Films
- Properties and Degradation of Polarization Reversal of Soft BaTiO_3 Ceramics for Ferroelectric Thin-Film Devices
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Dual Focus Optical Head with a Hologram-Integrated Lens
- Dual Focus Optical Head for 0.6mm and 1.2mm Disks
- Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates
- Thermoelectric Performance of Yttrium-substituted (ZnO)_5In_2O_3 Improved through Ceramic Texturing : Short Note
- Production of YBa_2Cu_3O_ Thick Films on Ag Metal Substrate Controlled by Oxygen
- Thermal Etching of 6H-SiC Substrate Surface
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
- Nanoscale Formation of Metallic Glasses by Solid-State Chemical Reaction
- Histological Changes of an Injectable rhBMP-2/Calcium Phosphate Cement in Vertebroplasty of Rhesus Monkey
- Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
- Bias-enhanced Nucleation of Oriented Diamond on Singlecrystalline 6H-SiC Substrates
- Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition
- A Holographic Optical Element for an Integrated Optical Head
- A Very Small Holographic Optical Pick-up Head with a Movable Single-Assembly Optical System : Head Technology
- A Very Small Holographic Optical Pick-up Head with a Movable Single-Assembly Optical System
- Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements
- Optical Surface Mount Technology
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- SiO_2 Film Deposition by KrF Excimer Laser Irradiation
- Large-Scale Synthesis of Aligned Carbon Nanotubes by Surface-Wave-Excited Microwave-Plasma-Enhanced Chemical Vapor Deposition : Surfaces, Interfaces, and Fiims
- Simple Hexagonal Coulomb Crystal near a Deformed Plasma Sheath Boundary in a Dusty Plasma
- Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
- Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
- Selective Epitaxial Growth of Silicon Carbide on Silicon using HMDS
- Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique : Semiconductors
- Ellipsometric Monitoring of First Stages of Diamond Nucleation in a Bias-Enhanced Surface-Wave-Excited Microwave Plasma
- Plasma Copolymerization of Tetratluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase
- Plasma Etching of CVD Grown Cubic SiC Single Crystals
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
- Electrochemical Catalytic Carbon-skeleton Rearrangement Mediated by Imine/Oxime-type B_ Model Complex
- A Preferable Probe Molecule for Evaluating the Surface Acidic Properties of Sulfated Zirconium and Iron Oxides by Microcalorimetric Adsorption Measurement
- Nanoscale Formation of Metallic Glasses by Solid-State Chemical Reaction (第4回アジア情報記録技術シンポジウム〔英文〕)
- FT Raman Study of the Surface Oxygen Species on the BaX_2 (X=F,Cl) Promoted Y_2O_3 and Nd_2O_3 Catalysts for the Oxidative Dehydrogenation of Ethane
- A New Structure of an N-Channel Junction Field-Effect Transistor Embedded in a Pin Diode for an X-Ray Detector
- Effect of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current–Voltage Characteristics of Schottky Barrier Diodes
- Accurate Determination of Acceptor Densities and Acceptor Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration
- Existence theorems of two families of vector generalized quasi-optimization problems with applications (非線形解析学と凸解析学の研究--RIMS研究集会報告集)
- GaN Growth on Si(111) Using Simultaneous AlN/$\alpha$-Si3N4 Buffer Structure
- Si Substrate Suitable for Radiation-Resistant Space Solar Cells
- Preparation of Stable F-Doped SiO 2 Thin Films from Si(NCO) 4/SiF 4/O 2 Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source
- A Simple Graphical Method for Determining Densities and Energy Levels of Donors and Acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration
- Bursting firing of action potentials in central snail neurons elicited by d-amphetamine: role of cytoplasmic second messengers
- Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration
- Investigation of Transient Reverse Currents in X-Ray Detector Pin Diodes by Discharge Current Transient Spectroscopy
- Difference between Traps Determined from Transient Capacitance and Transient Reverse Current
- An Improved Method for Determining Densities and Energy Levels of Dopants and Traps by Means of Hall-Effect Measurement
- Analyses of Early Stages of Vertically Aligned Carbon Nanotube Growth by Plasma-Enhanced Chemical Vapor Deposition
- A Simple Graphical Method for Evaluating Dipole Relaxation Time in Dielectric
- Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources
- Evaluation of Densities and Energy Levels of Donors and Acceptors in Compensated Semiconductor from Temperature Dependence of Majority Carrier Concentration
- Analyses of an Oriented Diamond Nucleation Processes on Si Substrate by Hot Filament Chemical Vapor Deposition
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Gas Phase Syntheses of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition Using Hot filament and Plasma
- Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
- Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on ($11\bar{2}0$) 6H-SiC Substrates
- A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration
- Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon
- Fabrication of Twisted Nematic Gratings Using Polarization Hologram Based on Azo-Dye-Doped Liquid Crystals
- Electrical Properties of Undoped and Ion-Implanted Cubic SiC Grown on Si(100) by Chemical Vapor Deposition
- Thermal Etching of 6H–SiC Substrate Surface