A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-09-15

著者

• Taniguchi Kazuo

  Department of Pediatrics, Nihon University School of Medicine

• Nishida Katsuhiko

  Eniwa Research And Development Center Kyoto Semiconductor Corporation

• MATSUURA Hideharu

  Department of Electronics, Osaka Electro-Communication University

• AKATANI Kenji

  Department of Electronics, Osaka Electro-Communication University

• UEDA Michihisa

  Department of Electronics, Osaka Electro-Communication University

• SEGAWA Kazushige

  Department of Electronics, Osaka Electro-Communication University

• TOMOZAWA Hidemasa

  Eniwa Research and Development Center, Kyoto Semiconductor Corporation

• Akatani Kenji

  Department Of Electronics Osaka Electro-communication University

• Ueda Michihisa

  Department Of Electronics Osaka Electro-communication University

• Segawa Kazushige

  Department Of Electronics Osaka Electro-communication University

• Tomozawa Hidemasa

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Tomozawa Hidemasa

  Eniwa Research And Development Center Kyoto Semiconductor Corporation

• Taniguchi Kazuo

  Department Of Materials Science Osaka Electro-communication University

• Taniguchi Kazuo

  Department Of A Nesthesiology Oita Medical University

• Nishida K

  Eniwa Research And Development Center Kyoto Semiconductor Corporation

• Matsuura Hideharu

  Department Of Electronic Engineering And Computer Science Osaka Electro-communication University

• Ueda Michihisa

  Department of Chemistry, Faculty of Science, Osaka City University

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