MATSUURA Hideharu | Department of Electronics, Osaka Electro-Communication University
スポンサーリンク
概要
関連著者
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsuura Hiroto
College Of Engineering University Of Osaka Prefecture
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Matsunami H
Kyoto Univ. Kyoto Jpn
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Yoshimoto Masahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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Nishida Katsuhiko
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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CHEN Yi
Department of Chemistry, Nanjing University
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Taniguchi Kazuo
Department of Pediatrics, Nihon University School of Medicine
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Fujii Hisao
Department of Endoscopy and Ultrasound, Nara Medical University
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MATSUDA Sumio
National Space Development Agency of Japan (NASDA)
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AKATANI Kenji
Department of Electronics, Osaka Electro-Communication University
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UEDA Michihisa
Department of Electronics, Osaka Electro-Communication University
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SEGAWA Kazushige
Department of Electronics, Osaka Electro-Communication University
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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Akatani Kenji
Department Of Electronics Osaka Electro-communication University
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Ueda Michihisa
Department Of Electronics Osaka Electro-communication University
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HISAMATSU Tadashi
National Space Development Agency of Japan
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Segawa Kazushige
Department Of Electronics Osaka Electro-communication University
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Masuda Yoshitake
Nagoya University Graduate School Of Engineering Department Of Applied Chemistry
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Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electronics Kyoto University
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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Chen Y
Department Of Electronic Science And Engineering Kyoto University
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MASUDA Yasuichi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Kimoto Tsunenobu
Department Of Electronics Science And Engineering Kyoto University
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Taniguchi Kazuo
Department Of Materials Science Osaka Electro-communication University
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Taniguchi Kazuo
Department Of A Nesthesiology Oita Medical University
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Masuda Y
Department Of Electronic Intelligence And Systems Hachinohe Institute Of Technology
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Fujii Hisao
Department Of Electronics Kyoto University
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Takai Hitoshi
Department Of Electronics Kyoto University
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Matsuda Sumio
National Space Development Agency Of Japan
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Nishino S
Kyoto Inst. Technol. Kyoto Jpn
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Nishida K
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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NISHIKAWA KAZUHIRO
Department of Surgery, Osaka General Medical Center
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MORITA Kouhei
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University
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MIZUKOSHI Takeo
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University
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SEGAWA Masaharu
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University
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SUSAKI Wataru
Department of Electronic Engineering and Computer Science, Osaka Electro-Communication University
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Masuda Yasuichi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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UCHIDA Yoshitsugu
Osaka Branch, Tokyo Technica Co.
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Susaki Wataru
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Morita Kouhei
General R&d Laboratories Taiyo Yuden Co. Ltd.
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Segawa Masaharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Mizukoshi Takeo
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Masuda Y
Human Ecology Research Center Sanyo Electric Co. Ltd.
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Nishikawa Kazuhiro
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Uchida Yoshitsugu
Osaka Branch Tokyo Technica Co.
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Chen Yi
Department Of Chemistry And Biochemistry Graduate School Of Engineering Kyushu University
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Matsunami Hiroyuki
Department Of Electronics Science And Engineering Kyoto University
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Matsuura Hideharu
Department Of Electronics Kyoto University
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Morita Kouhei
Department Of Diagnostic Pathology Nara Medical University School Of Medicine
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Morita Kouhei
Department Of Diagnostic Pathology Nara Medical University
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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Ueda Michihisa
Department of Chemistry, Faculty of Science, Osaka City University
著作論文
- A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
- Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
- Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
- Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements
- Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- A New Structure of an N-Channel Junction Field-Effect Transistor Embedded in a Pin Diode for an X-Ray Detector