Yoshimoto Masahiro | Department Of Electrical Engineering Kyoto University
スポンサーリンク
概要
関連著者
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yoshimoto M
Materials And Structures Laboratory Tokyo Institute Of Technology
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Matsunami H
Kyoto Univ. Kyoto Jpn
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Fuyuki Takashi
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University
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Fuyuki T
Nara Inst. Sci. And Technol. Nara Jpn
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Yoshimoto M
Kyoto Inst. Technol. Kyoto Jpn
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Fuyuki Takashi
Department Of Eectrical Engineering Kyoto University
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Fujii Tadashi
the Graduate School of Materials Science, Nara Institute of Science and Technology
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FUYUKI Takashi
Department of Electrical Engineering, Kyoto University
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University
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Fuyuki Takuma
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Matsuura Hiroto
College Of Engineering University Of Osaka Prefecture
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Huang Wei
Department Of Biochemistry And Molecular Biology Beijing Normal University Beijing Key Laboratory
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Tominaga Yoriko
Department Of Electronics Kyoto Institute Of Technology
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Yoshimoto Masahiro
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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HUANG Wei
Department of Aeronautics and Astronautics, National Cheng Kung University
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OE Kunishige
Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology
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TAKEHARA Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Yoshimoto Masahiro
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Itoh Mitsunari
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Yasui Toshiyuki
Department Of Electronic Science And Engineering Kyoto University
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Nakamura Kazuhiro
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Kashiyama Shota
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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WATANABE Yutaka
Department of Machine Intelligence and Systems Engineering, Graduate School of Engineering, Tohoku U
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VACCARO Pablo
Department of Photonics, ATR Wave Engineering Laboratories
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Aizawa Kouichi
Department Of Integrated Biosciences Graduate School Of Frontier Sciences The University Of Tokyo:sa
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Aizawa Kouichi
Department Of Electrical Engineering Kyoto University
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Du Kai-ying
Department Of Electrical Engineering Kyoto University
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Huang Wei
Department Of Electronics Information Science Kyoto Institute Of Technology
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Oe Kunishige
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Vaccaro Pablo
Department Of Electrical Engineering Kyoto University
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Yamada Kazuya
Department Of Fixed Prosthodontics Nihon University School Of Dentistry
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Murata Satoshi
Department Of Computational Intelligence And Systems Science Interdisciplinary Graduate School Of Sc
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WATANABE YASUHIRO
Department of Neurology, Matsue Red Cross Hospital
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Nakamura Mitsutaka
Department Of Dermatology Tokuyama Central Hospital
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FUJII Tadashi
Department of Electronic Science and Engineering, Faculty of Engineering, Kyoto University
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SHIRAFUJI Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology
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Watanabe Yutaka
Department Of Epidemiology For Community Health And Medicine Kyoto Prefectural University Of Medicin
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Saraie Junji
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Okuda Rokuro
Vice-president Fukui Medical School
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Harima Hiroshi
Department Of Applied Physics Osaha University
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OKUHARA KENJI
Department of Pediatrics, Faculty of Medicine, Kyoto University
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FUJISAWA SHINICHI
Department of Pediatrics, Fukui Midecal School
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Okuhara Kenji
Department Of Pediatrics Faculty Of Medicine Kyoto University
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Oe Kunishige
Department Of Electronics Kyoto Institute Of Technology
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TOMINAGA Yoriko
Department of Electronics, Kyoto Institute of Technology
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HASHIMOTO Tadao
Department of Applied Chemistry, Muroran Institute of Technology
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Hashimoto Tadao
Department Of Electrical Engineering Kyoto University
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Hashimoto Tadao
Department Of Applied Chemistry Muroran Institute Of Technology
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HASHIMOTO Tetsutaro
Department of Electronic Science and Engineering, Kyoto University
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Yoshimoto Masahiro
Department Of Electronics Kyoto Institute Of Technology
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Yoshimoto Masahiro
Department Of Electronic Science And Engineering Kyoto University:(present Address) Department Of El
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OHTSUKI Tetsuya
Department of Electrical Engineering, Kyoto University
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TAKUBO Kenji
Department of Electrical Engineering, Kyoto University
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KOMODA Michio
Department of Electrical Engineering, Kyoto University
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Kurobe Tatsuro
Department Of Electronic Science And Engineering Kyoto University
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Ohtsuki Tetsuya
Department Of Electrical Engineering Kyoto University
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Ha Sanghoon
Department Of Electronic Science And Engineering Kyoto University
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Fujisawa Shinichi
Department Of Pediatrics Fukui Midecal School
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KAJIMOTO Atsushi
Department of Electrical Engineering, Kyoto University
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Takehara Y
Kanto Central Hospital
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Takubo Kenji
Department Of Electrical Engineering Kyoto University
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Komoda Michio
Department Of Electrical Engineering Kyoto University
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Yoshimoto Masahiro
Department Of Pediatrics Fukui Midecal School
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Nakamura Shuji
Materials Department University Of Cahfornia
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Takubo Kenji
Department Of Digestive Surgery Matsue Red Cross Hospital
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Kajimoto Atsushi
Department Of Electrical Engineering Kyoto University
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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Fujii Tadashi
Department Of Botany Faculty Of Science Tokyo University Of Education
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Watanabe Yutaka
Department Of Applied Chemistry Faculty Of Engineering Ehime University
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Watanabe Yasuhiro
Department Of Neurology Institute Of Neurological Sciences Tottori University
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Huang Wei
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Watanabe Yasuhiro
Department Of Electronic Science And Engineering Kyoto University
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Watanabe Yasuhiro
Department Of Clinical Biochemistry Hokkaido College Of Pharmacy
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Watanabe Yutaka
Department Of Pediatrics Osaka Red Cross Hospital
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OHTSUKI Tetsuya
Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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Chayahara Akiyoshi
AIST Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University
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Kurobe Tatsuro
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Taguchi Kohshi
Department of Electronics and Electrical Engieering, Fukuyama University
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WATANABE Yutaka
Department of Anatomy, Osaka Medical College
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Oe Kunishige
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Oe Kunishige
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Oe Kunishige
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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MATSUNAMI Hiroyuki
Department of Electrical Engineering, Kyoto University
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Yoshimoto Masahiro
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Horino Yuji
AIST Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Goto Motoki
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Harima Hiroshi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Huang Wei
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Huang Wei
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Takehara Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Murata Satoshi
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University
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Itoh Mitsunari
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Feng Gan
Cooperative Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Ha Sanghoon
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Nakamura Kazuhiro
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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Nakamura Kazuhiro
Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606-8501, Japan
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Taguchi Kohshi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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Saraie Junji
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Yasui Toshiyuki
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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Yasui Toshiyuki
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Murata Satoshi
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Hashimoto Tetsutaro
Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan
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Taguchi Koushi
Department of Electronics Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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MURATA SATOSHI
Department of Agricultural Engineering, Kyushu University
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Kado Kosuke
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
著作論文
- Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
- Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
- GaN_yAs_Bi_x Alloy Lattice Matched to GaAs with 1.3μm Photoluminescence Emission
- Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
- Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
- Anti-streptococcal Cell Membrane and Anti-human Glomerular Basement Membrane Titers in Sera of Patients with Poststreptococcal Acute Glomerulonephritis and Anaphylactoid Purpura : THE 7th CONFERENCE ON PREVENTION FOR RHEUMATIC FEVER AND RHEUMATIC HEART DI
- Low Temperature Dependence of Oscillation Wavelength in GaAs_Bi_x Laser by Photo-Pumping
- Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
- Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
- Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
- Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
- Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy
- Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
- Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers
- Electron Spin Resonance and Photoluminescence in a-Si_C_x:H Deposited at Low Substrate Temperature
- Low-Temperature Microscopic Photoluminescence Images of Epitaxially Laterally Overgrown GaN : Optical Properties of Condensed Matte
- Hot Electron Conduction in a-Si:H/a-Si_C_:H Super Structure
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- High Hole Mobility in GaAsxBi[x] Alloys
- Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures
- Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
- Scanning Photoluminescence Microscope with Sub-micron Resolution and High Optical Throughput at a Low Temperature
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
- Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source
- Direct Observation of Polytype Domains in GaN using a Cryogenic Scanning Photoluminescence Microscope with Sub-Micron Spatial Resolution
- Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy
- Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
- Improved Electrical Properties of InN by High-Temperature Annealing with In Situ Capped SiNx Layers
- Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy