Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers
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概要
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Nondestructive characterization of stacking faults (SFs) in 4H-SiC epilayers was carried out by photoluminescence (PL) mapping to clarify the effects of excitation power and measurement temperature. The PL mapping pattern of in-grown SFs fades in above a certain excitation intensity (e.g., 8.2 W/cm2 in this study) because of the superlinear excitation power dependence of the PL emission of the SFs. Bar-shaped SFs were identified in PL mapping at low temperatures. The PL intensity of bar-shaped SFs decreases with increasing temperature with an activation energy of 53 meV. Possible mechanisms of the emission of the SFs are also discussed.
- 2010-01-25
著者
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Nakamura Mitsutaka
Department Of Dermatology Tokuyama Central Hospital
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Yoshimoto Masahiro
Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan
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