Deep-Hole Traps in p-Type GaAs_1-xBi_x Grown by Molecular Beam Epitaxy

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概要

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• Deep-level transient spectroscopy measurements reveal deep-hole traps with activation energies of 0.43 and 0.23 eV in p-type GaAs_1-xBi_x samples with $x = 1.2$ and 3.4%, respectively, grown at 370 °C by molecular beam epitaxy. In spite of low-temperature growth, the deep-level trap concentration is suppressed on the order of $10^{15}$ cm-3, suggesting that Bi atoms contribute to the enhancement of migration to prevent the formation of point defects. The possible origin of the hole traps is discussed in connection with arsenic antisite, As_\text{Ga, and bismuth antisite, Bi_\text{Ga.

• 2011-08-25

著者

• Oe Kunishige

  Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute

• Yoshimoto Masahiro

  Department Of Electrical Engineering Kyoto University

• Tominaga Yoriko

  Department Of Electronics Kyoto Institute Of Technology

• Yoshimoto Masahiro

  Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

• Fuyuki Takuma

  Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

• Kashiyama Shota

  Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan

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