GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
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概要
- 論文の詳細を見る
Luminescent GaAs1-xPx ($0.2<x<0.7$) was grown on a Si substrate by metalorganic molecular beam epitaxy (MOMBE). The insertion of a GaP buffer layer grown at a low temperature was essential to obtain luminescent GaAsP on Si. The growth condition of the GaP buffer layer was optimized based on the results of atomic force microscopy, reflection high-energy electron diffraction, and X-ray diffraction. Chemical and thermal treatments of the Si substrate were also carefully examined to obtain a flat surface and a sharp X-ray rocking curve of the GaAsP epilayer. The GaAsP epilayer on Si emits photoluminescence ascribed to the donor acceptor pair emission at a low temperature, and to a band-edge emission at room temperature. The GaAsP epilayer was doped for both n- and p-types with carrier concentrations up to $2 \times 10^{18}$ and $6 \times 10^{19}$ cm-3, respectively. A GaAsP pn junction on a GaP substrate with a total thickness of 1.25 $\mu$m shows bright electroluminescence, indicating a tough nature against the large lattice mismatch. The preliminary GaAsP pn junctions on Si showed infrared and visible luminescence at room temperature.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-15
著者
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Itoh Mitsunari
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Kurobe Tatsuro
Department Of Electronic Science And Engineering Kyoto University
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Yasui Toshiyuki
Department Of Electronic Science And Engineering Kyoto University
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Ha Sanghoon
Department Of Electronic Science And Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsunami Hiroyuki
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Kurobe Tatsuro
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Yoshimoto Masahiro
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Itoh Mitsunari
Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Ha Sanghoon
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Yasui Toshiyuki
Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan
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