Interface States in p-Type GaAs/GaAsxBi[x] Heterostructure (Special Issue : Applied Physics on Materials Research)
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概要
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Yoshimoto Masahiro
Department Of Electrical Engineering Kyoto University
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Fuyuki Takuma
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Kashiyama Shota
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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