Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix ($x=5$%) and GaAs was estimated to be approximately 0.5%.
- 2006-01-15
著者
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Oe Kunishige
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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CHAYAHARA Akiyoshi
National Institute of Advanced Industrial Science and Technology
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TAKEHARA Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology
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Saraie Junji
Department Of Electronic Engineering Faculty Of Engineering Kyoto University
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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YOSHIMOTO Masahiro
Cooperative Research Center, Kyoto Institute of Technology
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Chayahara Akiyoshi
National Institute of Advanced Industrial Science and Technology Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Huang Wei
Laboratory of High-Tech Materials, Institute of Chemistry, The Chinese Academy of Sciences, Zhongguancun North First Street 2, 100080 Beijing, People's Republic of China
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Yoshimoto Masahiro
Cooperative Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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Horino Yuji
National Institute of Advanced Industrial Science and Technology Kansai, 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Huang Wei
Laboratory of High-Tech Materials, Institute of Chemistry, The Chinese Academy of Sciences, Zhongguancun North First Street 2, 100080 Beijing, People's Republic of China
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Yoshimoto Masahiro
Cooperate Research Center, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan
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