New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-07-01
著者
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Huang Wei
Department Of Electronics Information Science Kyoto Institute Of Technology
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OE Kunishige
Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology
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YOSHIMOTO Masahiro
Department of Electrical Engineering, Kyoto University
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TAKEHARA Yuji
Department of Electronics and Information Science, Kyoto Institute of Technology
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SARAIE Junji
Department of Electronics and Information Science, Kyoto Institute of Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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HORINO Yuji
AIST Kansai
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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