New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-07-01

著者

• Huang Wei

  Department Of Electronics Information Science Kyoto Institute Of Technology

• OE Kunishige

  Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology

• YOSHIMOTO Masahiro

  Department of Electrical Engineering, Kyoto University

• TAKEHARA Yuji

  Department of Electronics and Information Science, Kyoto Institute of Technology

• SARAIE Junji

  Department of Electronics and Information Science, Kyoto Institute of Technology

• CHAYAHARA Akiyoshi

  AIST Kansai

• HORINO Yuji

  AIST Kansai

• Chayahara Akiyoshi

  Department Of Electrical Engineering Hiroshima University

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