Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H

スポンサーリンク

概要

• 論文の詳細を見る
• 1993-10-15

著者

• TAKANO Hiromichi

  Department of Physiology, Nagoya City University Medical School

• Horino Y

  Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)

• Yokota Kazuaki

  Department Of Molecular Chemistry Graduate Shool Of Engineering Hokkaido University

• Nishida K

  Osaka Univ. Osaka Jpn

• YOKOTA Katsuhiro

  Faculty of Engineering, Kansai University

• CHAYAHARA Akiyoshi

  Government Industrial Research Institute

• HORINO Yuji

  National Institute of Advanced Industrial Science and Technology

• CHAYAHARA Akiyoshi

  Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology

• Nishida Kouji

  Faculty Of Engineering Kansai University

• Chayahara Akiyoshi

  Department Of Electrical Engineering Hiroshima University

• Chayahara Akiyoshi

  Government Industrial Research Institute Osaka

• Hirai K

  Kanagawa High-technology Foundation

• Kumagai M

  Kanagawa Industrial Technology Research Institute

• Tamura Susumu

  Faculty Of Engineering Kansai University

• Kamai Masayoshi

  Joining And Welding Research Institute Osaka University

• SATHO Mamoru

  Government Industrial Research institute Osaka

• Horino Yuji

  National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn

• HIRAI Kiyohito

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• TAKANO Hiromichi

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• YUTANI Akira

  Faculty of Engineering, Kansai University

• HORINO Yuuji

  Government Industrial Research Institute Osaka

• KUMAGAYA Mashao

  Kanagawa High-Technology Foundation, Kanagawa Science Park

• Yokota K

  Kobe Univ. Kobe Jpn

• Yokota Katsuhiro

  Faculty Of Engineering Kansai University

• Yutani Akira

  Faculty Of Engineering Kansai University

• Sakaguchi M

  Kansai Univ. Osaka Jpn

• Takano H

  Department Of Physiology Nagoya City University Medical School

• Takano Hiromichi

  Kanagawa High-technology Foundation

• Sakaguchi M

  Univ. Tsukuba

• Yokota Katsuhiro

  Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan

• NISHIDA Katsuhiko

  Central Research Laboratories, Nippon Electric Co., Ltd.

• Takano Hiromichi

  Kanagawa High Technology Foundation Kanagawa Science Park

関連論文

• Effect of Estrogen Replacement Therapy on Hepatic Triglyceride Lipase, Lipoprotein Lipase and Lipids Including Apolipoprotein E in Climacteric and Elderly Women
• Electrical Properties of Colonic Smooth Muscle in Spontaneously Non-Insulin-Dependent Diabetic Rats
• Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
• Growth of Hydrogenated Amorphous Silicon by an Inductive Coupling Glow Discharge Reactor
• Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
• Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
• Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
• Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
• High-Dose Implantation of MeV Carbon Ion into Silicon
• Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
• Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
• Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
• Focused High-Energy Heavy Ion Beams
• Surface Structure of Ion-Implanted Silica Glass
• Tomography of Microstructures by Scanning Micro-RBS Probe
• Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
• 23-O-16 Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses
• Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
• Ion-Beam 3C-SiC Heteroepitaxy on Si
• Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
• Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
• Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
• Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
• Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
• Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
• Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
• Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
• Local Adhesion of Diamond-Like Carbon Films Coated on Substrates in a Trench-shaped Cathode
• Effects of Ion-Beam-Irradiation on Morphology and Densification of CeO_2 Films Prepared by Ion-Beam-Assisted Deposition
• Preparation and Nanoscale Characterization of Highly Stable YBa_2Cu_3O_ Thin Films
• Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
• Japanese Family with Gloucocorticoid-Remediable Aldosteronism Diagnosed by Long-Polymerase Chain Reaction
• Hyperthyroidism in a Patient with TSH-Producing Pituitary Adenoma Coexisting with Thyroid Papillary Adenocarcinoma
• Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
• Morphology and Microstructure of Hard and Superhard Zr-Cu-N Nanocomposite Coatings
• Shunting arc generation and deposition of amorphous carbon
• Preparation of TiN film on an Φ80mm pipe by DC vacuum cathodic arc deposition and PBII
• Effect of Estrogen and Progesterone on Gene Expression of Growth Regulatory Molecules and Proto-Oncogene in Vascular Smooth Muscle Cells
• Zr-based Hydrogen Absorbing Films Prepared by Ion Beam Assisted Deposition(Physics, Processes, Instruments & Measurements)
• Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
• Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
• X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
• 23-P-06 Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions
• New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
• Formation of Columnar from Poly(p-Methylethynylbenzene) Polymerized Using [Rh(norbornadiene)Cl]_2 as a Catalyst. An X-Ray and ESR Study
• Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
• Effects of Nifedipine and Nickel on Plateau Potentials Generated in Submucosal Interstitial Cells Distributed in the Mouse Proximal Colon
• Reflectance spectra of BN Materials in the Vacuum Ultraviolet
• GaAs Films Heteroepitaxially Grown on Si Substrates by Mixture Beams of Ions and Molecules
• Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
• Degradation of High-Temperature Superconductor YBa_2Cu_3O_ in Water
• Behavior of Excess Te Atoms in Undoped p-type CdTe Annealed under Te Vapor Pressures
• Thermally-Stimulated Current in p-Type CdTe Annealed in Various Atmospheres
• Anodic Oxidation of CdTe as a Thin-Layer Removal Technique
• Head-Down Tilt Posture Attenuates Anaphylactic Hypotension in Mice and Rats
• N^G-Nitro-L-arginine Methyl Ester, but Not Methylene Blue, Attenuates Anaphylactic Hypotension in Anesthetized Mice
• 7.Inhibitory effect of anaphylaxis on oxygen consumption of isolated perfused rat liver
• Solar Cell Characteristics of High-Efficiency Polycrystalline Silicon Solar Cells Using SOG-Cast Wafers
• Development of High Efficiency Polycrystalline Silicon Solar Cells Using Solar Grade Cast Wafers
• Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing
• Fabrication of 1 Inch Mosaic Crystal Diamond Wafers
• Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
• Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
• Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
• Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
• Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
• Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
• Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
• Pulsed Laser Deposition of C_ Thin Films with Atomically Smooth Surface
• Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
• Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
• Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
• Influence of Crystal Strain on Superconductivity of a-Axis Oriented YBa_2Cu_3O_x Films
• Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
• Helicon Wave Plasma Enhanced Sputtering and Application to Synthesis of Carbon Nitride Films(Physics, Process, Instrument & Measurements)
• Cross Sections for ^O(He,He)^O Resonant Elastic Scattering and Application to Elemental Analysis of YBa_2Cu_4O_ and Nd_Ba_Cu_3O_ Films Grown on SrTiO_3
• Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters
• Studies on Magnetron Sputtering Assisted by Inductively Coupled RF Plasma for Enhanced Metal Ionization
• Inductively-Coupled-Plasma-Assisted Planar Magnetron Discharge for Enhanced Ionization of Sputtered Atoms
• Properties of S Implanted in GaAs Activated Using As-Doped a-Si:H Encapsulant Films
• Use of Focused High-Power 60-GHz Radiation Beams for Advanced Sintering of Ceramics(Physics, Processes, Instruments & Measurements)
• Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
• Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
• Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
• Growth of CdTe on Te Substrates by Solid-State Reaction
• Spreading vasodilatation in resistance arteries
• Heteroepitaxial Growth of c-Axis-Oriented BaTiO_3 Thin Films with an Atomically Smooth Surface
• Formation of Polycrystalline SiC in ECR Plasma
• Successful Treatment of HTLV-1-Related Overlap Syndrome Using Tacrolimus
• Improving the Quality of GaAs Films by Electron Beam Irradiation during Molecular Beam Epitaxial Growth at Low Temperature
• Imaginary Part of the Dielectric Function of Sintered and Microcrystalline Cubic Boron Nitride
• Huge Mucinous Cystic Neoplasm of the Pancreas in a Young Diabetic Woman

もっと見る 閉じる

スポンサーリンク