Halogen and Mercury Lamp Annealing of Arsenic Implanted into Silicon
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概要
- 論文の詳細を見る
As implanted Si was annealed using halogen and mercury lamps whose lights primarily have, respectively, infrared and ultraviolet regions. Annealing time necessary for fully electrically activating the implanted As in the mercury lamp annealing was shorter than that in the halogen lamp annealing, when the light emitted from the two lamps was of the same intensity. This was due to the difference in intensity of the light absorbed into the implanted Si between the lamps used at the beginning of annealing.
- 社団法人応用物理学会の論文
- 1987-02-20
著者
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Tamura Shigeharu
Government Industrial Research Institute
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YOKOTA Katsuhiro
Faculty of Engineering, Kansai University
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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KIMURA Itsuro
Research Reactor Institute, Kyoto University
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Tamura S
Sony Corp. Yokohama Jpn
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Kimura Itsuro
Research Reactor Institute Kyoto University
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Muta Kenji
Faculty Of Engineering Kansai University
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Tamura Susumu
Faculty Of Engineering Kansai University
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Ishihara Shinji
Research Reactor Institute Kyoto University
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KIMURA Masatoshi
Faculty of Engineering, Kansai University
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Kimura Masatoshi
Faculty Of Engineering Kansai University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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