Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique
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概要
- 論文の詳細を見る
Microcrystalline silicon thin films exhibiting high crystallinity and high quality were successfully fabricated from the fluorinated precursors SiH_nF_m (n+m≤3) by repeating the deposition of very thin layers, 10 nm thick, and by treatment with atomic hydrogen. Hydrogen concomitant with dangling bonds is efficiently removed from the Si network at the levels of 0.45 at.% and 3.7 × 10^<16> spins/cm^3, respectively. A specific texture showing a strong orientation toward (220) is observed in the X-ray diffraction (XRD) spectra. High photoconductivity and a considerable diffusion length of 400 nm for holes under the ambipolar condition verify the films' high quality and high crystallinity.
- 社団法人応用物理学会の論文
- 1993-04-15
著者
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shimizu Isamu
Tokyo Institute of Technology
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ISHIHARA Shun-ichi
Tokyo Institute of Technology, Graduate School
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HE Deyan
Tokyo Institute of Technology, Graduate School
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NAKATA Masami
Tokyo Institute of Technology, Graduate School
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Ishihara S
Tokyo Institute Of Technology Graduate School
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He Deyan
Tokyo Institute Of Technology Graduate School
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