Annealing Behavior of Arsenic and Gallium Implanted in Silicon with Thin Native-Oxide Films
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概要
- 論文の詳細を見る
The influence of thin native oxide films (〜25A) on the annealing behavior of As and Ga implanted in Si has been studied. Although no implanted As evaporated from the solids into the ambient atmosphere during annealing, the amount of implanted As diffusing from the Si into the native-oxide films increased with the annealing temperature to 2×10^<14>cm^<-2> at a dose of l×10^<16>cm^<-2> at an annealing temperature of ll00℃. On the other hand, the amount of implanted Ga evaporating from the solids into the ambient atmosphere increased exponentially with the annealing temperature; the amount of implanted Ga remaining in the Si was only 7% of the dose of l×10^<15>cm^<-2> at an annealing temperature of l100℃.
- 社団法人応用物理学会の論文
- 1985-01-20
著者
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Tamura Shigeharu
Government Industrial Research Institute
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YOKOTA Katsuhiro
Faculty of Engineering, Kansai University
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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KIMURA Itsuro
Research Reactor Institute, Kyoto University
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Tamura S
Sony Corp. Yokohama Jpn
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Kimura Itsuro
Research Reactor Institute Kyoto University
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Tamura Susumu
Faculty Of Engineering Kansai University
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Ishihara Shinji
Research Reactor Institute Kyoto University
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Yokota Katsuhiro
Faculty Of Engineering Kansai University
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Yokota Katsuhiro
Faculty of Engineering and High-Technology Research Center, Kansai University, Suita, Osaka 564-8680, Japan
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