Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Shin K‐c
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Shin Ki-chul
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kudo K
Tokyo Inst. Technol. Tokyo Jpn
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Kudo K
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Kudo Kazuki
Ntt Interdisciplinary Research Laboratories
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Tamura M
Univ. Tokyo Tokyo Jpn
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
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Kudo K
Tohoku Univ. Sendai Jpn
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Tamura S
Sony Corp. Yokohama Jpn
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NAGASHIMA Yasuaki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KUDO Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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ARAI Shigehisa
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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Nagashima Y
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ubukata A
Tsukuba Laboratories Nippon Sanso Corporation
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Nagashima Yasuaki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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