Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
It is shown that a preheating process in a pure hydrogen atmosphere with a (NH_4)_2S_x treatment was effective for improvement of the regrown interface in InP organometallic vapor phase epitaxy (OMVPE). The carrier concentration was under 5×10^<15> cm^&tl;-3> in the entire region after the regrowth, even if we carried out various dummy processes of fabrication between the first growth and the surface treatment for improvement. Thus, this improvement will be useful for the device-required regrowth process after fabrication of an ultrafine-size structure.
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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HIRAYAMA Hideki
Department of Physical Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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Hirayama Hideki
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAKE Yasunari
Department of Electrical and Electronics Engineering, Tokyo Institute of Technology
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Miyake Yasunari
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyake Yasunari
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Suemasu Takeshi
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Suemasu Takeshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
関連論文
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect
- InP Hot Electron Transistors with a Buried Metal Gate
- Cooling and Excitation Tests of a Thin 1 mφ×1 m Superconducting Solenoid Magnet
- Measurement of Propagation Velocities of the Normal Zone in a 1 mφ×1 m Superconducting Solenoid Magnet
- Fabrication of Ultrafine X-Ray Mask Using Precise Crystal Growth Technique
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Possible Errors due to Deviation from the Cosine Response in the Reference Cell Calibration under Global Irradiance
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Theoretical Gain of Quantum-Well Wire Lasers
- Japanese Indoor Calibration Method for the Reference Solar Cell and Comparison with the Outdoor Calibration
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- A 25-nm-pitch GaInAs/InP Buried Structure Using Calixarene Resist
- High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
- Characterization of GaInAs/InP Triple-Barrier Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy for High-Temperature Estimation of Phase Coherent Length of Electrons
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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- Calibration of Pyranometers for the Photovoltaic Device Field
- GaInAs/InP Hot Electron Transistors Grown by OMVPE
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- Development of Photochemical Analysis System for F_2-Excimer Laser Lithography Processes
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
- Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
- Study of Deprotection Reaction during Exposure in Chemically Amplified Resists for Lithography Simulation
- Analysis of Deprotection Reaction in Chemically Amplified Resists Using an Fourier Transform Infrared Spectrometer with an Exposure Tool
- Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm
- Fabrication of Vertical and Uniform-Size Porous InP Structure by Electrochemical Anodization
- Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Observation of InP Surfaces after (NH_4)_2S_x Treatment by a Scanning Tunneling Microscope
- Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate
- Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
- Spectral Characteristics of Linewidth Enhancement Factor $\alpha$ of Multidimensional Quantum Wells