招待講演 InGaAs/InP MISFET with epitaxially grown source (Silicon devices and materials)
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概要
- 論文の詳細を見る
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivability in these thin films can be achieved if the doping concentration in the source is made to exceed 1×10^<19>cm^<-3>. However, in the case of III-V materials, it is difficult to achieve high doping concentrations using ion implantation techniques. This report includes the results of our attempt to realize an epitaxially grown source, with which high doping concentrations can be achieved. One approach involves the fabrication of an InP/InGaAs composite channel MISFET with InGaAs source and drain by selective regrowth using MOVPE. The other approach involves the use of vertical FETs with a heterolauncher for the ballistic transport of electrons.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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齋藤 尚史
東京工業大学
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MIYAMOTO Yasuyuki
Department of Physical Electronics, Tokyo Institute of Technology
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FURUYA Kazuhito
Department of Physical Electronics, Tokyo Institute of Technology
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Saito Hisahi
Department Of Physical Electronics Tokyo Institute Of Technology
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Kanazawa Toru
Department of Physical Electronics, Tokyo Institute of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kanazawa Toru
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Furuya Kazuhito
Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Tokyo Inst. Technol. Tokyo Jpn
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Saito Hisashi
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Miyamoto Yasuyuki
Tokyo Institute of Technology
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