High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
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概要
- 論文の詳細を見る
As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity. We report the fabrication of GaInAs/GaInP resonant tunneling diodes which exhibit current density-voltage characteristics with a peak-to-valley current ratio of 7.8 at 4.2 K. To our knowledge, this is the highest value obtained for this material system.
- 1997-08-15
著者
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SUHARA Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Oobo Takashi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Furuya Kazuhito
Department Of Electrical And Electronic Engineering
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Takemura Riichiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Miyamoto Yasuyuki
Department Of Electrical And Electronic Engineering
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Suhara Michihiko
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology,
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Takemura Riichiro
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
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Miyamoto Yasuyuki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology,
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