High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic High Electron Mobility Transistor for Ka-Band Applications

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概要

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• A 70 nm In0.52Al0.48As/In0.6Ga0.4As power metamorphic high electron mobility transistor (MHEMT) with a double $\delta$-doping structure was fabricated and evaluated. The device has a high transconductance of 827 mS/mm. The saturated drain-source current of the device is 890 mA/mm. A current gain cutoff frequency ($ f_{\text{T}}$) of 200 GHz and a maximum oscillation frequency ($ f_{\text{max}}$) of 300 GHz were achieved owing to the nanometer gate length and high indium content in the channel. When measured at 32 GHz, the $0.07\times 160$ μm2 device demonstrates a maximum output power of 14.5 dBm (176 mW/mm) and a P1 dB of 11.1 dBm (80 mW/mm) with a 9.5 dB power gain. The excellent DC and RF performance of the 70 nm MHEMT are comparable to those of InP-based HEMTs and show the great potential for Ka-band power applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• Chen Szu-hung

  Department Of Materials Science And Engineering And Microelectronics And Information Systems Researc

• Chang Chia-yuan

  Department Of Chemical Engineering National Taiwan University

• Miyamoto Yasuyuki

  Department Of Electrical And Electronic Engineering

• Kuo Chien-i

  Department Of Materials Science And Engineering National Chiao-tung University

• Chang Edward

  Department Of Communications Engineering Yuan Ze University

• Chu Li-Hsin

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lien Yi-Chung

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Kuo Chien-I

  Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• CHEN Szu-Hung

  Department of Materials and Mineral Resources Engineering, National Taipei University of Technology

• Miyamoto Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152-8552, Japan

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